HFS7N80A Datasheet. Specs and Replacement

Type Designator: HFS7N80A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm

Package: TO220F

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HFS7N80A datasheet

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HFS7N80A

June 2021 BVDSS = 800 V RDS(on) Typ = 1.55 HFS7N80A ID = 7.0 A 800V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.) Extended Safe Oper... See More ⇒

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HFS7N80A

July 2005 BVDSS = 800 V RDS(on) typ = 1.55 HFS7N80 ID = 7.0 A 800V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Unrivalled Gate Charge 35 nC (Typ ) E... See More ⇒

Detailed specifications: HFS4N60F, HFS4N60FS, HFS50N06A, HFS5N60F, HFS5N65JS, HFS5N65SA, HFS730F, HFS730S, AO4407A, HFS830F, HFS8N60UA, HFS8N65JS, HFS8N65SA, HFS9N90A, HFT1N60F, HFU1N60F, HFU1N60S

Keywords - HFS7N80A MOSFET specs

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