All MOSFET. HFS830F Datasheet

 

HFS830F Datasheet and Replacement


   Type Designator: HFS830F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12 nC
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220F
 

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HFS830F Datasheet (PDF)

 ..1. Size:637K  semihow
 hfp830f hfs830f.pdf pdf_icon

HFS830F

May 2016 HFP830F / HFS830F 500V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 500 V Very Low Intrinsic Capacitances ID 5 A Excellent Switching Characteristics RDS(on), Typ 1.2 100% Avalanche Tested Qg, Typ 12 nC RoHS Compliant HFP830F HFS830F Symbol TO-220 TO-220F S S D D G G Absolute Ma

 8.1. Size:181K  semihow
 hfs830.pdf pdf_icon

HFS830F

Dec 2005BVDSS = 500 VRDS(on) typ HFS830ID = 4.5 A500V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 18 nC (Typ.) Extended Safe Operating Area Lowe

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History: WMK6N90D1

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