HFU4N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: HFU4N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 2.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: IPAK
HFU4N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HFU4N50 Datasheet (PDF)
..1. Size:238K semihow
hfd4n50 hfu4n50.pdf
hfd4n50 hfu4n50.pdf
July 2005BVDSS = 500 VRDS(on) typ HFD4N50 / HFU4N50ID = 2.6 A500V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD4N50 HFU4N50 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
