HFU4N50 Datasheet and Replacement
Type Designator: HFU4N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: IPAK
HFU4N50 Datasheet (PDF)
hfd4n50 hfu4n50.pdf

July 2005BVDSS = 500 VRDS(on) typ HFD4N50 / HFU4N50ID = 2.6 A500V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD4N50 HFU4N50 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.
Datasheet: HFS9N90A , HFT1N60F , HFU1N60F , HFU1N60S , HFU1N60SA , HFU2N60F , HFU2N60S , HFU2N60U , IRF640 , HFU5N40 , HFU5N50S , HFU5N50U , HFU5N60F , HFU5N60S , HFU5N60U , HFU5N65SA , HFW50N06A .
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