HFU4N50 MOSFET Datasheet: N-Ch, 500V, 2.6A. Full specification with pinout and replacement list

HFU4N50 Specs and Replacement

   Type Designator: HFU4N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: IPAK

HFU4N50 substitution

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HFU4N50 datasheet

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July 2005 BVDSS = 500 V RDS(on) typ HFD4N50 / HFU4N50 ID = 2.6 A 500V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD4N50 HFU4N50 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ.... See More ⇒

Detailed specifications: HFS9N90A , HFT1N60F , HFU1N60F , HFU1N60S , HFU1N60SA , HFU2N60F , HFU2N60S , HFU2N60U , IRFP460 , HFU5N40 , HFU5N50S , HFU5N50U , HFU5N60F , HFU5N60S , HFU5N60U , HFU5N65SA , HFW50N06A .