All MOSFET. HFW50N06A Datasheet

 

HFW50N06A MOSFET. Datasheet pdf. Equivalent


   Type Designator: HFW50N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 27 nC
   trⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 445 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO263

 HFW50N06A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFW50N06A Datasheet (PDF)

 ..1. Size:418K  semihow
 hfi50n06a hfw50n06a.pdf

HFW50N06A HFW50N06A

Oct 2016HFI50N06A / HFW50N06A60V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 50 A Excellent Switching CharacteristicsRDS(on), Typ 18 100% Avalanche TestedQg, Typ 27 nC RoHS CompliantHFI50N06A HFW50N06ASymbolTO-262 TO-263DS

 6.1. Size:237K  semihow
 hfi50n06 hfw50n06.pdf

HFW50N06A HFW50N06A

Nov 2009BVDSS = 60 VRDS(on) = 18 mHFW50N06 / HFI50N06ID = 50 A60V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW50N06 HFI50N06 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operati

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top