HFW840 Datasheet. Specs and Replacement

Type Designator: HFW840

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 25 nC

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: D2PAK

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HFW840 datasheet

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HFW840

April 2016 BVDSS = 500 V RDS(on) typ HFW840 ID = 9.0 A 500V N-Channel MOSFET D2-PAK 2 FEATURES Originative New Design 1 Superior Avalanche Rugged Technology 3 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 25 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

Detailed specifications: HFU5N40, HFU5N50S, HFU5N50U, HFU5N60F, HFU5N60S, HFU5N60U, HFU5N65SA, HFW50N06A, IRFB4227, HRA40N08K, HRA45N08K, HRD120N10K, HRD180N10K, HRD50N06K, HRD72N06K, HRD80N06K, HRD85N08K

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