All MOSFET. HFW840 Datasheet

 

HFW840 Datasheet and Replacement


   Type Designator: HFW840
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: D2PAK
 

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HFW840 Datasheet (PDF)

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HFW840

April 2016BVDSS = 500 VRDS(on) typ HFW840 ID = 9.0 A500V N-Channel MOSFETD2-PAK2FEATURES Originative New Design1 Superior Avalanche Rugged Technology31.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 25 nC (Typ.) Extended Safe Operating Area Lo

Datasheet: HFU5N40 , HFU5N50S , HFU5N50U , HFU5N60F , HFU5N60S , HFU5N60U , HFU5N65SA , HFW50N06A , AON6414A , HRA40N08K , HRA45N08K , HRD120N10K , HRD180N10K , HRD50N06K , HRD72N06K , HRD80N06K , HRD85N08K .

History: IPS60R2K1CE | IRLU3114ZPBF | NCEP40T14G | JCS9AN50VC | 2SK1520 | SSF4004S | STF9N65M2

Keywords - HFW840 MOSFET datasheet

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