All MOSFET. HFW840 Datasheet

 

HFW840 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HFW840
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: D2PAK

 HFW840 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFW840 Datasheet (PDF)

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 hfw840.pdf

HFW840 HFW840

April 2016BVDSS = 500 VRDS(on) typ HFW840 ID = 9.0 A500V N-Channel MOSFETD2-PAK2FEATURES Originative New Design1 Superior Avalanche Rugged Technology31.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 25 nC (Typ.) Extended Safe Operating Area Lo

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BLF7G15LS-200

 

 
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