All MOSFET. HFW840 Datasheet

 

HFW840 Datasheet and Replacement


   Type Designator: HFW840
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: D2PAK
 

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HFW840 Datasheet (PDF)

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HFW840

April 2016BVDSS = 500 VRDS(on) typ HFW840 ID = 9.0 A500V N-Channel MOSFETD2-PAK2FEATURES Originative New Design1 Superior Avalanche Rugged Technology31.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 25 nC (Typ.) Extended Safe Operating Area Lo

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History: H12N65P

Keywords - HFW840 MOSFET datasheet

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