HRD50N06K Datasheet. Specs and Replacement

Type Designator: HRD50N06K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: DPAK

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HRD50N06K datasheet

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HRD50N06K

Sep 2015 BVDSS = 60 V RDS(on) typ HRD50N06K / HRU50N06K ID = 40 A 60V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRD50N06K HRU50N06K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 11.... See More ⇒

Detailed specifications: HFU5N60U, HFU5N65SA, HFW50N06A, HFW840, HRA40N08K, HRA45N08K, HRD120N10K, HRD180N10K, 2N7000, HRD72N06K, HRD80N06K, HRD85N08K, HRF120N10K, HRF130N06K, HRF140N06K, HRF85N08K, HRLD125N06K

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