HRD85N08K Datasheet. Specs and Replacement

Type Designator: HRD85N08K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: DPAK

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HRD85N08K datasheet

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HRD85N08K

March 2018 HRD85N08K 80V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design Reliable and Rugged BVDSS 80 V Advanced Trench Process Technology ID (Silicon Limited) 110 A 100% UIS Tested, 100% Rg Tested RDS(on), typ 7 m Application Package & Internal Circuit Power Management in Inverter System D-PAK Sy... See More ⇒

Detailed specifications: HFW840, HRA40N08K, HRA45N08K, HRD120N10K, HRD180N10K, HRD50N06K, HRD72N06K, HRD80N06K, 7N65, HRF120N10K, HRF130N06K, HRF140N06K, HRF85N08K, HRLD125N06K, HRLD150N10K, HRLD1B8N10K, HRLD250N10K

Keywords - HRD85N08K MOSFET specs

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