HRD85N08K Datasheet and Replacement
Type Designator: HRD85N08K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 75 nC
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 440 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: DPAK
HRD85N08K substitution
HRD85N08K Datasheet (PDF)
hrd85n08k.pdf

March 2018 HRD85N08K 80V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design Reliable and Rugged BVDSS 80 V Advanced Trench Process Technology ID (Silicon Limited) 110 A 100% UIS Tested, 100% Rg Tested RDS(on), typ 7 m Application Package & Internal Circuit Power Management in Inverter System D-PAK Sy
Datasheet: HFW840 , HRA40N08K , HRA45N08K , HRD120N10K , HRD180N10K , HRD50N06K , HRD72N06K , HRD80N06K , STP75NF75 , HRF120N10K , HRF130N06K , HRF140N06K , HRF85N08K , HRLD125N06K , HRLD150N10K , HRLD1B8N10K , HRLD250N10K .
History: APT50M65B2FLL
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History: APT50M65B2FLL



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