All MOSFET. HRD85N08K Datasheet

 

HRD85N08K Datasheet and Replacement


   Type Designator: HRD85N08K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: DPAK
 

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HRD85N08K Datasheet (PDF)

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HRD85N08K

March 2018 HRD85N08K 80V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design Reliable and Rugged BVDSS 80 V Advanced Trench Process Technology ID (Silicon Limited) 110 A 100% UIS Tested, 100% Rg Tested RDS(on), typ 7 m Application Package & Internal Circuit Power Management in Inverter System D-PAK Sy

Datasheet: HFW840 , HRA40N08K , HRA45N08K , HRD120N10K , HRD180N10K , HRD50N06K , HRD72N06K , HRD80N06K , STP75NF75 , HRF120N10K , HRF130N06K , HRF140N06K , HRF85N08K , HRLD125N06K , HRLD150N10K , HRLD1B8N10K , HRLD250N10K .

History: SIHD4N80E | MMBFJ175 | AO3456 | IPC100N04S5L-2R6

Keywords - HRD85N08K MOSFET datasheet

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