HRD85N08K MOSFET. Datasheet pdf. Equivalent
Type Designator: HRD85N08K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 75 nC
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 440 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: DPAK
HRD85N08K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HRD85N08K Datasheet (PDF)
..1. Size:805K semihow
hrd85n08k.pdf
hrd85n08k.pdf
March 2018 HRD85N08K 80V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design Reliable and Rugged BVDSS 80 V Advanced Trench Process Technology ID (Silicon Limited) 110 A 100% UIS Tested, 100% Rg Tested RDS(on), typ 7 m Application Package & Internal Circuit Power Management in Inverter System D-PAK Sy
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