All MOSFET. HRF120N10K Datasheet

 

HRF120N10K MOSFET. Datasheet pdf. Equivalent


   Type Designator: HRF120N10K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 65 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: 8DFN5X6

 HRF120N10K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HRF120N10K Datasheet (PDF)

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 hrf120n10k.pdf

HRF120N10K HRF120N10K

May 2017 HRF120N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design Reliable and Rugged BVDSS 100 V Advanced Trench Process Technology ID 60 A 100% UIS Tested, 100% Rg Tested RDS(on), typ 10 m Lead free, Halogen Free Application Package & Internal Circuit Power Management in Inverter System 8

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: XP202A0003PR-G | IXFP10N60P | MTP8N50E | XP161A1265PR-G

 

 
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