HRF120N10K Datasheet. Specs and Replacement

Type Designator: HRF120N10K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: 8DFN5X6

HRF120N10K substitution

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HRF120N10K datasheet

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HRF120N10K

May 2017 HRF120N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design Reliable and Rugged BVDSS 100 V Advanced Trench Process Technology ID 60 A 100% UIS Tested, 100% Rg Tested RDS(on), typ 10 m Lead free, Halogen Free Application Package & Internal Circuit Power Management in Inverter System 8... See More ⇒

Detailed specifications: HRA40N08K, HRA45N08K, HRD120N10K, HRD180N10K, HRD50N06K, HRD72N06K, HRD80N06K, HRD85N08K, IRFP250N, HRF130N06K, HRF140N06K, HRF85N08K, HRLD125N06K, HRLD150N10K, HRLD1B8N10K, HRLD250N10K, HRLD33N03K

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