All MOSFET. HRF140N06K Datasheet

 

HRF140N06K MOSFET. Datasheet pdf. Equivalent


   Type Designator: HRF140N06K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: 8DFN5X6

 HRF140N06K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HRF140N06K Datasheet (PDF)

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 hrf140n06k.pdf

HRF140N06K HRF140N06K

Jan 2016HRF140N06K60V N-Channel Trench MOSFET8DFN 5x6FEATURES BVDSS = 60 V ID = 40 A1 Unrivalled Gate Charge : 40 nC (Typ.) Lower RDS(ON) : 11.5 (Typ.) @VGS=10V 100% Avalanche TestedAbsolute Maximum Ratings TJ=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 60 VVGS Gate-Source Voltage 20 VTC = 25 40 AID Drain Current TC

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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