All MOSFET. HRLD40N04K Datasheet

 

HRLD40N04K MOSFET. Datasheet pdf. Equivalent


   Type Designator: HRLD40N04K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 130 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DPAK

 HRLD40N04K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HRLD40N04K Datasheet (PDF)

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 hrld40n04k.pdf

HRLD40N04K HRLD40N04K

March 2018 HRLD40N04K 40V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit High Dense Cell Design, Logic Level BVDSS 40 V Reliable and Rugged ID (Silicon Limited) 130 A Advanced Trench Process Technology RDS(on), typ @10V 3.3 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 4.0 m Application Package & Internal Circuit

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