HRLF110N03K Datasheet. Specs and Replacement

Type Designator: HRLF110N03K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V

Qg ⓘ - Total Gate Charge: 21 nC

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: 8DFN5X6

HRLF110N03K substitution

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HRLF110N03K datasheet

 ..1. Size:775K  semihow
 hrlf110n03k.pdf pdf_icon

HRLF110N03K

July 2017 HRLF110N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 42 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal Ci... See More ⇒

 9.1. Size:228K  semihow
 hrlf150n10k.pdf pdf_icon

HRLF110N03K

Jan 2016 HRLF150N10K 100V N-Channel Trench MOSFET 8DFN 5x6 FEATURES BVDSS = 100 V ID = 50 A 1 Unrivalled Gate Charge 80 nC (Typ.) Lower RDS(ON) 13 (Typ.) @VGS=10V Lower RDS(ON) 14 (Typ.) @VGS=4.5V 100% Avalanche Tested Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage... See More ⇒

 9.2. Size:715K  semihow
 hrlf190n03k.pdf pdf_icon

HRLF110N03K

July 2017 HRLF190N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 31 A Advanced Trench Process Technology RDS(on), typ @10V 16 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 20 m Lead free, Halogen Free Application Package & Internal Circu... See More ⇒

 9.3. Size:212K  semihow
 hrlf180n10k.pdf pdf_icon

HRLF110N03K

Jan 2016 HRLF180N10K 100V N-Channel Trench MOSFET 8DFN 5x6 FEATURES BVDSS = 100 V ID = 40 A 1 Unrivalled Gate Charge 94 nC (Typ.) Lower RDS(ON) 16 (Typ.) @VGS=10V Lower RDS(ON) 17 (Typ.) @VGS=4.5V 100% Avalanche Tested Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage... See More ⇒

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Detailed specifications: HRLD250N10K, HRLD33N03K, HRLD370N10K, HRLD40N04K, HRLD55N03K, HRLD72N06, HRLD80N06K, HRLE320N03K, SKD502T, HRLF125N06K, HRLF150N10K, HRLF180N10K, HRLF190N03K, HRLF33N03K, HRLF55N03K, HRLF72N06, HRLF80N06K

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