HRLF110N03K - параметры транзистора MOSFET, его аналоги, datasheet

HRLF110N03K Datasheet (PDF)

..1. Size:775K semihow
hrlf110n03k.pdf pdf_icon

July 2017 HRLF110N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 42 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal Ci

9.1. Size:228K semihow
hrlf150n10k.pdf pdf_icon

Jan 2016HRLF150N10K100V N-Channel Trench MOSFET8DFN 5x6FEATURES BVDSS = 100 V ID = 50 A1 Unrivalled Gate Charge : 80 nC (Typ.) Lower RDS(ON) : 13 (Typ.) @VGS=10V Lower RDS(ON) : 14 (Typ.) @VGS=4.5V 100% Avalanche TestedAbsolute Maximum Ratings TJ=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 100 VVGS Gate-Source Voltage

9.2. Size:715K semihow
hrlf190n03k.pdf pdf_icon

July 2017 HRLF190N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 31 A Advanced Trench Process Technology RDS(on), typ @10V 16 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 20 m Lead free, Halogen Free Application Package & Internal Circu

9.3. Size:212K semihow
hrlf180n10k.pdf pdf_icon

Jan 2016HRLF180N10K100V N-Channel Trench MOSFET8DFN 5x6FEATURES BVDSS = 100 V ID = 40 A1 Unrivalled Gate Charge : 94 nC (Typ.) Lower RDS(ON) : 16 (Typ.) @VGS=10V Lower RDS(ON) : 17 (Typ.) @VGS=4.5V 100% Avalanche TestedAbsolute Maximum Ratings TJ=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 100 VVGS Gate-Source Voltage