HRLF125N06K Datasheet. Specs and Replacement

Type Designator: HRLF125N06K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V

Qg ⓘ - Total Gate Charge: 50 nC

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: 8DFN5X6

HRLF125N06K substitution

- MOSFET ⓘ Cross-Reference Search

 

HRLF125N06K datasheet

 ..1. Size:184K  semihow
 hrlf125n06k.pdf pdf_icon

HRLF125N06K

Jan 2016 HRLF125N06K 60V N-Channel Trench MOSFET 8DFN 5x6 FEATURES BVDSS = 60 V ID = 52 A 1 Unrivalled Gate Charge 50 nC (Typ.) Lower RDS(ON) 10 (Typ.) @VGS=10V Lower RDS(ON) 12 (Typ.) @VGS=4.5V 100% Avalanche Tested Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage 2... See More ⇒

 9.1. Size:228K  semihow
 hrlf150n10k.pdf pdf_icon

HRLF125N06K

Jan 2016 HRLF150N10K 100V N-Channel Trench MOSFET 8DFN 5x6 FEATURES BVDSS = 100 V ID = 50 A 1 Unrivalled Gate Charge 80 nC (Typ.) Lower RDS(ON) 13 (Typ.) @VGS=10V Lower RDS(ON) 14 (Typ.) @VGS=4.5V 100% Avalanche Tested Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage... See More ⇒

 9.2. Size:715K  semihow
 hrlf190n03k.pdf pdf_icon

HRLF125N06K

July 2017 HRLF190N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 31 A Advanced Trench Process Technology RDS(on), typ @10V 16 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 20 m Lead free, Halogen Free Application Package & Internal Circu... See More ⇒

 9.3. Size:775K  semihow
 hrlf110n03k.pdf pdf_icon

HRLF125N06K

July 2017 HRLF110N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 42 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal Ci... See More ⇒

SHOW MORE

Detailed specifications: HRLD33N03K, HRLD370N10K, HRLD40N04K, HRLD55N03K, HRLD72N06, HRLD80N06K, HRLE320N03K, HRLF110N03K, K4145, HRLF150N10K, HRLF180N10K, HRLF190N03K, HRLF33N03K, HRLF55N03K, HRLF72N06, HRLF80N06K, HRLFS136N10P

Keywords - HRLF125N06K MOSFET specs

 HRLF125N06K cross reference

 HRLF125N06K equivalent finder

 HRLF125N06K pdf lookup

 HRLF125N06K substitution

 HRLF125N06K replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility