HRLF33N03K Datasheet. Specs and Replacement

Type Designator: HRLF33N03K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2 V

Qg ⓘ - Total Gate Charge: 110 nC

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: 8DFN5X6

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HRLF33N03K datasheet

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HRLF33N03K

August 2018 HRLF33N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID (Silicon Limited) 85 A Advanced Trench Process Technology RDS(on), typ @10V 2.7 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 3.2 m Application Package & Internal Circuit ... See More ⇒

Detailed specifications: HRLD72N06, HRLD80N06K, HRLE320N03K, HRLF110N03K, HRLF125N06K, HRLF150N10K, HRLF180N10K, HRLF190N03K, 5N65, HRLF55N03K, HRLF72N06, HRLF80N06K, HRLFS136N10P, HRLFS190N03K, HRLFS55N03K, HRLFS72N06P, HRLFS90N03K

Keywords - HRLF33N03K MOSFET specs

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