HRLF55N03K Datasheet. Specs and Replacement

Type Designator: HRLF55N03K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V

Qg ⓘ - Total Gate Charge: 50 nC

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 315 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: 8DFN5X6

HRLF55N03K substitution

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HRLF55N03K datasheet

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HRLF55N03K

Jan 2016 HRLF55N03K 30V N-Channel Trench MOSFET 8DFN 5x6 FEATURES BVDSS = 30 V ID = 65 A 1 Unrivalled Gate Charge 50 nC (Typ.) Lower RDS(ON) 4.2 (Typ.) @VGS=10V Lower RDS(ON) 7.5 (Typ.) @VGS=4.5V 100% Avalanche Tested Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 30 V VGS Gate-Source Voltage ... See More ⇒

Detailed specifications: HRLD80N06K, HRLE320N03K, HRLF110N03K, HRLF125N06K, HRLF150N10K, HRLF180N10K, HRLF190N03K, HRLF33N03K, IRF1010E, HRLF72N06, HRLF80N06K, HRLFS136N10P, HRLFS190N03K, HRLFS55N03K, HRLFS72N06P, HRLFS90N03K, HRLO110N03K

Keywords - HRLF55N03K MOSFET specs

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