All MOSFET. HRLF55N03K Datasheet

 

HRLF55N03K Datasheet and Replacement


   Type Designator: HRLF55N03K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: 8DFN5X6
 

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HRLF55N03K Datasheet (PDF)

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HRLF55N03K

Jan 2016HRLF55N03K30V N-Channel Trench MOSFET8DFN 5x6FEATURES BVDSS = 30 V ID = 65 A1 Unrivalled Gate Charge : 50 nC (Typ.) Lower RDS(ON) : 4.2 (Typ.) @VGS=10V Lower RDS(ON) : 7.5 (Typ.) @VGS=4.5V 100% Avalanche TestedAbsolute Maximum Ratings TJ=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 30 VVGS Gate-Source Voltage

Datasheet: HRLD80N06K , HRLE320N03K , HRLF110N03K , HRLF125N06K , HRLF150N10K , HRLF180N10K , HRLF190N03K , HRLF33N03K , TK10A60D , HRLF72N06 , HRLF80N06K , HRLFS136N10P , HRLFS190N03K , HRLFS55N03K , HRLFS72N06P , HRLFS90N03K , HRLO110N03K .

History: RJK0856DPB | RFM12N08 | CS8N60U | STB20NM50-1 | IPP80P04P4-07 | QS5U33 | IRFG110

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