HRLF80N06K Datasheet. Specs and Replacement

Type Designator: HRLF80N06K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: 8DFN5X6

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HRLF80N06K datasheet

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HRLF80N06K

Jan 2016 HRLF80N06K 60V N-Channel Trench MOSFET 8DFN 5x6 FEATURES BVDSS = 60 V ID = 70 A 1 Unrivalled Gate Charge 100 nC (Typ.) Lower RDS(ON) 6.3 (Typ.) @VGS=10V Lower RDS(ON) 7.5 (Typ.) @VGS=4.5V 100% Avalanche Tested Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ... See More ⇒

Detailed specifications: HRLF110N03K, HRLF125N06K, HRLF150N10K, HRLF180N10K, HRLF190N03K, HRLF33N03K, HRLF55N03K, HRLF72N06, AON6380, HRLFS136N10P, HRLFS190N03K, HRLFS55N03K, HRLFS72N06P, HRLFS90N03K, HRLO110N03K, HRLO125N06K, HRLO180N10K

Keywords - HRLF80N06K MOSFET specs

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