All MOSFET. HRLF80N06K Datasheet

 

HRLF80N06K Datasheet and Replacement


   Type Designator: HRLF80N06K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: 8DFN5X6
 

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HRLF80N06K Datasheet (PDF)

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HRLF80N06K

Jan 2016HRLF80N06K60V N-Channel Trench MOSFET8DFN 5x6FEATURES BVDSS = 60 V ID = 70 A1 Unrivalled Gate Charge : 100 nC (Typ.) Lower RDS(ON) : 6.3 (Typ.) @VGS=10V Lower RDS(ON) : 7.5 (Typ.) @VGS=4.5V 100% Avalanche TestedAbsolute Maximum Ratings TJ=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 60 VVGS Gate-Source Voltage

Datasheet: HRLF110N03K , HRLF125N06K , HRLF150N10K , HRLF180N10K , HRLF190N03K , HRLF33N03K , HRLF55N03K , HRLF72N06 , IRLZ44N , HRLFS136N10P , HRLFS190N03K , HRLFS55N03K , HRLFS72N06P , HRLFS90N03K , HRLO110N03K , HRLO125N06K , HRLO180N10K .

History: PSA07N65 | CPC3701C | IRF5803 | UJ0100 | CRJF390N65GC | STD120N4LF6 | TMPF8N25Z

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