HRLFS136N10P Datasheet. Specs and Replacement
Type Designator: HRLFS136N10P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 61 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 48 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20.8 nS
Cossⓘ - Output Capacitance: 240 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0136 Ohm
Package: 8DFN3X3
HRLFS136N10P substitution
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HRLFS136N10P datasheet
hrlfs136n10p.pdf
May 2020 HRLFS136N10P 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit High Speed Power Switching, Logic Level BVDSS 100 V Enhanced Body diode dv/dt capability ID 48 A Enhanced Avalanche Ruggedness RDS(on), typ @10V 11.3 m 100% UIS Tested, 100% Rg Tested Lead free, Halogen Free RDS(on), typ @4.5V 16.7 m Application Package & Intern... See More ⇒
hrlfs190n03k.pdf
Jan 2016 HRLFS190N03K 30V N-Channel Trench MOSFET 8DFN 3x3 FEATURES BVDSS = 30 V ID = 28 A 1 Unrivalled Gate Charge 12 nC (Typ.) Lower RDS(ON) 16 (Typ.) @VGS=10V Lower RDS(ON) 20 (Typ.) @VGS=4.5V 100% Avalanche Tested Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 30 V VGS Gate-Source Voltage ... See More ⇒
hrlfs72n06p.pdf
March 2020 HRLFS72N06P 65V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit High Speed Power Switching, Logic Level BVDSS 65 V Enhanced Body diode dv/dt capability ID 58 A Enhanced Avalanche Ruggedness RDS(on), typ @10V 6.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 9.6 m Lead free, Halogen Free Application Package & Internal Circuit Synchronous... See More ⇒
hrlfs55n03k.pdf
Feb 2020 HRLFS55N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 66 A Advanced Trench Process Technology RDS(on), typ @10V 4.2 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 5.7 m Lead free, Halogen Free Application Package & Internal Circuit Power Management in Inverter S... See More ⇒
Detailed specifications: HRLF125N06K, HRLF150N10K, HRLF180N10K, HRLF190N03K, HRLF33N03K, HRLF55N03K, HRLF72N06, HRLF80N06K, IRF530, HRLFS190N03K, HRLFS55N03K, HRLFS72N06P, HRLFS90N03K, HRLO110N03K, HRLO125N06K, HRLO180N10K, HRLO250N10K
Keywords - HRLFS136N10P MOSFET specs
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History: JMTP3008A | JMTLB3134K
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