HRLO250N10K Datasheet. Specs and Replacement

Type Designator: HRLO250N10K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOP8

HRLO250N10K substitution

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HRLO250N10K datasheet

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HRLO250N10K

Jan 2016 HRLO250N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit High Dense Cell Design BVDSS 100 V Reliable and Rugged ID 7.9 A Advanced Trench Process Technology RDS(on), typ @10V 20 RDS(on), typ @4.5V 22 Application Package & Internal Circuit Power Management in Inverter System SOP-8 Synchronous Rectification Absolute Maximum Ratings ... See More ⇒

Detailed specifications: HRLFS136N10P, HRLFS190N03K, HRLFS55N03K, HRLFS72N06P, HRLFS90N03K, HRLO110N03K, HRLO125N06K, HRLO180N10K, BS170, HRLO72N06, HRLP125N06K, HRLP150N10K, HRLP250N10K, HRLP33N03K, HRLP370N10K, HRLP40N04K, HRLP55N03K

Keywords - HRLO250N10K MOSFET specs

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