All MOSFET. HRLO250N10K Datasheet

 

HRLO250N10K Datasheet and Replacement


   Type Designator: HRLO250N10K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP8
 

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HRLO250N10K Datasheet (PDF)

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HRLO250N10K

Jan 2016HRLO250N10K100V N-Channel Trench MOSFETFeatures Key ParametersParameter Value Unit High Dense Cell DesignBVDSS 100 V Reliable and RuggedID 7.9 A Advanced Trench Process TechnologyRDS(on), typ @10V 20 RDS(on), typ @4.5V 22 ApplicationPackage & Internal Circuit Power Management in Inverter SystemSOP-8 Synchronous RectificationAbsolute Maximum Ratings

Datasheet: HRLFS136N10P , HRLFS190N03K , HRLFS55N03K , HRLFS72N06P , HRLFS90N03K , HRLO110N03K , HRLO125N06K , HRLO180N10K , 18N50 , HRLO72N06 , HRLP125N06K , HRLP150N10K , HRLP250N10K , HRLP33N03K , HRLP370N10K , HRLP40N04K , HRLP55N03K .

History: SIR878DP | HYG800P10LR1D | IRFI4510G | STP2N80K5 | SUD25N15-52-E3 | SD202DC | IRLR3802PBF

Keywords - HRLO250N10K MOSFET datasheet

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