HRLO250N10K MOSFET. Datasheet pdf. Equivalent
Type Designator: HRLO250N10K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 7.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 90 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 190 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOP8
HRLO250N10K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HRLO250N10K Datasheet (PDF)
hrlo250n10k.pdf
Jan 2016HRLO250N10K100V N-Channel Trench MOSFETFeatures Key ParametersParameter Value Unit High Dense Cell DesignBVDSS 100 V Reliable and RuggedID 7.9 A Advanced Trench Process TechnologyRDS(on), typ @10V 20 RDS(on), typ @4.5V 22 ApplicationPackage & Internal Circuit Power Management in Inverter SystemSOP-8 Synchronous RectificationAbsolute Maximum Ratings
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
