All MOSFET. HRLP370N10K Datasheet

 

HRLP370N10K Datasheet and Replacement


   Type Designator: HRLP370N10K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: TO220
 

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HRLP370N10K Datasheet (PDF)

 ..1. Size:146K  semihow
 hrlp370n10k.pdf pdf_icon

HRLP370N10K

Oct 2016BVDSS = 100 VRDS(on) typ = 30 HRLP370N10K ID = 25 A100V N-Channel Trench MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 53 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 (Typ.) @VGS=10V Lower RDS(ON) : 33 (T

 9.1. Size:779K  semihow
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HRLP370N10K

Sep 2018 HRLP33N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID (Silicon Limited) 150 A Advanced Trench Process Technology RDS(on), typ @10V 2.7 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 3.2 m Application Package & Internal Circuit Po

Datasheet: HRLO125N06K , HRLO180N10K , HRLO250N10K , HRLO72N06 , HRLP125N06K , HRLP150N10K , HRLP250N10K , HRLP33N03K , 5N60 , HRLP40N04K , HRLP55N03K , HRLP72N06 , HRLP80N06K , HRLT1B0N10K , HRLU125N06K , HRLU150N10K , HRLU1B8N10K .

History: NX7002AKA | AM4302N | SWI120R45VT | STP260N6F6 | CS240 | STP11N65M5 | NP100P06PLG

Keywords - HRLP370N10K MOSFET datasheet

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