HRLP370N10K Datasheet. Specs and Replacement

Type Designator: HRLP370N10K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm

Package: TO220

HRLP370N10K substitution

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HRLP370N10K datasheet

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HRLP370N10K

Oct 2016 BVDSS = 100 V RDS(on) typ = 30 HRLP370N10K ID = 25 A 100V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 53 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 30 (Typ.) @VGS=10V Lower RDS(ON) 33 (T... See More ⇒

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HRLP370N10K

Sep 2018 HRLP33N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID (Silicon Limited) 150 A Advanced Trench Process Technology RDS(on), typ @10V 2.7 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 3.2 m Application Package & Internal Circuit Po... See More ⇒

Detailed specifications: HRLO125N06K, HRLO180N10K, HRLO250N10K, HRLO72N06, HRLP125N06K, HRLP150N10K, HRLP250N10K, HRLP33N03K, 5N60, HRLP40N04K, HRLP55N03K, HRLP72N06, HRLP80N06K, HRLT1B0N10K, HRLU125N06K, HRLU150N10K, HRLU1B8N10K

Keywords - HRLP370N10K MOSFET specs

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