All MOSFET. HRP370N10K Datasheet

 

HRP370N10K Datasheet and Replacement


   Type Designator: HRP370N10K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: TO220
 

 HRP370N10K substitution

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HRP370N10K Datasheet (PDF)

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HRP370N10K

Oct 2016BVDSS = 100 VRDS(on) typ = 30 HRP370N10K ID = 25 A100V N-Channel Trench MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 (Typ.) @VGS=10V 100% Avalanche TestedA

Datasheet: HRP100N08K , HRP130N06K , HRP140N06K , HRP180N10K , HRP30N04K , HRP33N04K , HRP35N04K , HRP35N06K , IRF830 , HRP40N08K , HRP45N06K , HRP45N08K , HRP56N08K , HRP58N06K , HRP70N06K , HRP72N06K , HRP80N06K .

History: HRP33N04K | CS4N60A4TDY

Keywords - HRP370N10K MOSFET datasheet

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