All MOSFET. HRP370N10K Datasheet

 

HRP370N10K Datasheet and Replacement


   Type Designator: HRP370N10K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: TO220
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HRP370N10K Datasheet (PDF)

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HRP370N10K

Oct 2016BVDSS = 100 VRDS(on) typ = 30 HRP370N10K ID = 25 A100V N-Channel Trench MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 (Typ.) @VGS=10V 100% Avalanche TestedA

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MCH6613 | TSM4424CS | LKK47-06C5 | FQD9N25TM | H2N60U | SLF13N50A | BRCS200P03DP

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