All MOSFET. HRP56N08K Datasheet

 

HRP56N08K Datasheet and Replacement


   Type Designator: HRP56N08K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 272 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO220
 

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HRP56N08K Datasheet (PDF)

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HRP56N08K

March 2017 HRP56N08K 80V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design BVDSS 80 V Reliable and Rugged ID 140 A Advanced Trench Process Technology RDS(on), Typ 4.4 m 100% UIS Tested, 100% Rg Tested Qg, Typ 110 nC Lead free, Halogen Free Application Package & Internal Circuit Power Management in

Datasheet: HRP30N04K , HRP33N04K , HRP35N04K , HRP35N06K , HRP370N10K , HRP40N08K , HRP45N06K , HRP45N08K , EMB04N03H , HRP58N06K , HRP70N06K , HRP72N06K , HRP80N06K , HRP80N08K , HRP85N06K , HRP85N08K , HRP88N08K .

History: STB270N4F3 | IRFR3711ZC

Keywords - HRP56N08K MOSFET datasheet

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