HRP56N08K Datasheet. Specs and Replacement
Type Designator: HRP56N08K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 272 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 620 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO220
HRP56N08K substitution
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HRP56N08K datasheet
hrp56n08k.pdf
March 2017 HRP56N08K 80V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design BVDSS 80 V Reliable and Rugged ID 140 A Advanced Trench Process Technology RDS(on), Typ 4.4 m 100% UIS Tested, 100% Rg Tested Qg, Typ 110 nC Lead free, Halogen Free Application Package & Internal Circuit Power Management in... See More ⇒
Detailed specifications: HRP30N04K, HRP33N04K, HRP35N04K, HRP35N06K, HRP370N10K, HRP40N08K, HRP45N06K, HRP45N08K, AON7403, HRP58N06K, HRP70N06K, HRP72N06K, HRP80N06K, HRP80N08K, HRP85N06K, HRP85N08K, HRP88N08K
Keywords - HRP56N08K MOSFET specs
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