All MOSFET. HRP56N08K Datasheet

 

HRP56N08K Datasheet and Replacement


   Type Designator: HRP56N08K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 272 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO220
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HRP56N08K Datasheet (PDF)

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HRP56N08K

March 2017 HRP56N08K 80V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design BVDSS 80 V Reliable and Rugged ID 140 A Advanced Trench Process Technology RDS(on), Typ 4.4 m 100% UIS Tested, 100% Rg Tested Qg, Typ 110 nC Lead free, Halogen Free Application Package & Internal Circuit Power Management in

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History: FQD16N25C | APTM100UM65SCAVG | MTB80N08J3 | IXTX170P10P | IRF7606 | APT8075BVFRG | MXP4004BT

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