HRP85N08K Datasheet and Replacement
Type Designator: HRP85N08K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 440 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220
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HRP85N08K Datasheet (PDF)
hrp85n08k.pdf

Jan 2015 BVDSS = 80 V RDS(on) typ = 7.0m HRP85N08K ID = 110 A 80V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 75nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 7.0 m (Typ.) @VGS=
hrp85n06k.pdf

December 2014 BVDSS = 60 V RDS(on) typ = 7 m HRP85N06K ID = 80 A 60V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 73 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 7 m (Typ.) @VG
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: HGI110N10SL | TMP830 | IRFS151 | WMS10DH04TS | 2SK3342 | SHD224802 | IRFR420A
Keywords - HRP85N08K MOSFET datasheet
HRP85N08K cross reference
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History: HGI110N10SL | TMP830 | IRFS151 | WMS10DH04TS | 2SK3342 | SHD224802 | IRFR420A



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