OSG60R092FF Datasheet and Replacement
Type Designator: OSG60R092FF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 62.4 nS
Cossⓘ - Output Capacitance: 208.2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm
Package: TO220F
OSG60R092FF substitution
OSG60R092FF Datasheet (PDF)
osg60r092ff.pdf

OSG60R092FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg60r092hsf.pdf

OSG60R092HSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara
Datasheet: OSG60R070HT3ZF , OSG60R070KT3ZF , OSG60R070PT3ZF , OSG60R074FSZF , OSG60R074HSZF , OSG60R074JT3ZF , OSG60R074KSZF , OSG60R075HSZF , 20N60 , OSG60R092HF , OSG60R092HSF , OSG60R092HT3ZF , OSG60R092PT3ZF , OSG60R096FSF , OSG60R096HSF , OSG60R096KSF , OSG60R096PSF .
History: HUFA76609D3S | UF840KG-TF1-T | CES2362 | HY3215M | AM7331P | SVT044R5NT | RS1E280GN
Keywords - OSG60R092FF MOSFET datasheet
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OSG60R092FF replacement
History: HUFA76609D3S | UF840KG-TF1-T | CES2362 | HY3215M | AM7331P | SVT044R5NT | RS1E280GN



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