OSG60R092PT3ZF Datasheet. Specs and Replacement

Type Designator: OSG60R092PT3ZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58.6 nS

Cossⓘ - Output Capacitance: 154 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm

Package: TO220

OSG60R092PT3ZF substitution

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OSG60R092PT3ZF datasheet

 ..1. Size:979K  oriental semi
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OSG60R092PT3ZF

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 5.1. Size:404K  oriental semi
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OSG60R092PT3ZF

OSG60R092HSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara... See More ⇒

 5.2. Size:1085K  oriental semi
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OSG60R092PT3ZF

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 5.3. Size:386K  oriental semi
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OSG60R092PT3ZF

OSG60R092FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

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Detailed specifications: OSG60R074HSZF, OSG60R074JT3ZF, OSG60R074KSZF, OSG60R075HSZF, OSG60R092FF, OSG60R092HF, OSG60R092HSF, OSG60R092HT3ZF, IRFP460, OSG60R096FSF, OSG60R096HSF, OSG60R096KSF, OSG60R096PSF, OSG60R099FEZF, OSG60R099FT3F, OSG60R099HEZF, OSG60R099HF

Keywords - OSG60R092PT3ZF MOSFET specs

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