OSG60R099FEZF Datasheet. Specs and Replacement

Type Designator: OSG60R099FEZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 261 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29.4 nS

Cossⓘ - Output Capacitance: 223.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm

Package: TO220F

OSG60R099FEZF substitution

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OSG60R099FEZF datasheet

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Detailed specifications: OSG60R092HF, OSG60R092HSF, OSG60R092HT3ZF, OSG60R092PT3ZF, OSG60R096FSF, OSG60R096HSF, OSG60R096KSF, OSG60R096PSF, IRFB4110, OSG60R099FT3F, OSG60R099HEZF, OSG60R099HF, OSG60R099HSZF, OSG60R099HT3F, OSG60R099JF, OSG60R099KEZF, OSG60R099KSZF

Keywords - OSG60R099FEZF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs