All MOSFET. OSG60R099FEZF Datasheet

 

OSG60R099FEZF Datasheet and Replacement


   Type Designator: OSG60R099FEZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 261 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 29.4 nS
   Cossⓘ - Output Capacitance: 223.8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO220F
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OSG60R099FEZF Datasheet (PDF)

 ..1. Size:992K  oriental semi
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OSG60R099FEZF

 4.1. Size:957K  oriental semi
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OSG60R099FEZF

 5.1. Size:1006K  oriental semi
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OSG60R099FEZF

 5.2. Size:945K  oriental semi
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OSG60R099FEZF

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: STP25N06 | FIR20NS65AFG | HCI70R360 | SDFE22JAB | IXTP130N065T2 | DMP4050SSS | MTN15N50E3

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