OSG60R099FEZF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG60R099FEZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 261 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 57.8 nC
   trⓘ - Rise Time: 29.4 nS
   Cossⓘ - Output Capacitance: 223.8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO220F

OSG60R099FEZF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

OSG60R099FEZF Datasheet (PDF)

..1. Size:992K oriental semi
osg60r099fezf.pdf

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5.1. Size:1006K oriental semi
osg60r099pezf.pdf

5.2. Size:945K oriental semi
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5.3. Size:902K oriental semi
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5.4. Size:330K oriental semi
osg60r099kszf.pdf

OSG60R099KSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recove

5.5. Size:409K oriental semi
osg60r099hszf.pdf

OSG60R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

5.6. Size:410K oriental semi
osg60r099hf.pdf

OSG60R099HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

5.7. Size:371K oriental semi
osg60r099jf.pdf

OSG60R099JF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

5.8. Size:980K oriental semi
osg60r099hezf.pdf