OSG60R099FEZF - Даташиты. Аналоги. Основные параметры
Наименование производителя: OSG60R099FEZF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 261
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 36
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 29.4
ns
Cossⓘ - Выходная емкость: 223.8
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.099
Ohm
Тип корпуса:
TO220F
Аналог (замена) для OSG60R099FEZF
-
подбор ⓘ MOSFET транзистора по параметрам
OSG60R099FEZF Datasheet (PDF)
5.4. Size:330K oriental semi
osg60r099kszf.pdf 

OSG60R099KSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recove
5.5. Size:409K oriental semi
osg60r099hszf.pdf 

OSG60R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di
5.6. Size:410K oriental semi
osg60r099hf.pdf 

OSG60R099HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
5.7. Size:371K oriental semi
osg60r099jf.pdf 

OSG60R099JF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
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History: ME4470
| ME4485-G