OSG60R099FT3F Datasheet. Specs and Replacement
Type Designator: OSG60R099FT3F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39.4 nS
Cossⓘ - Output Capacitance: 131 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO220F
OSG60R099FT3F substitution
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OSG60R099FT3F datasheet
Detailed specifications: OSG60R092HSF, OSG60R092HT3ZF, OSG60R092PT3ZF, OSG60R096FSF, OSG60R096HSF, OSG60R096KSF, OSG60R096PSF, OSG60R099FEZF, IRF640N, OSG60R099HEZF, OSG60R099HF, OSG60R099HSZF, OSG60R099HT3F, OSG60R099JF, OSG60R099KEZF, OSG60R099KSZF, OSG60R099KT3F
Keywords - OSG60R099FT3F MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: OSG65R041HZF | NCV8401ADTRKG | RJK03E1DNS | SIHFIBE30G | OSG60R099HF
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