OSG60R099KEZF Datasheet and Replacement
Type Designator: OSG60R099KEZF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 261 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29.4 nS
Cossⓘ - Output Capacitance: 223.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO263
OSG60R099KEZF substitution
OSG60R099KEZF Datasheet (PDF)
osg60r099kszf.pdf
OSG60R099KSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recove
Datasheet: OSG60R096PSF , OSG60R099FEZF , OSG60R099FT3F , OSG60R099HEZF , OSG60R099HF , OSG60R099HSZF , OSG60R099HT3F , OSG60R099JF , AON6414A , OSG60R099KSZF , OSG60R099KT3F , OSG60R099PEZF , OSG60R108FZF , OSG60R108HSZF , OSG60R108HT3ZF , OSG60R108HZF , OSG60R108JZF .
History: 2SK959 | STP3401A | IRFI614A | TK7A65D | PSMN2R7-30PL | PSMN2R8-40PS | SWMN7N65J
Keywords - OSG60R099KEZF MOSFET datasheet
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OSG60R099KEZF replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 2SK959 | STP3401A | IRFI614A | TK7A65D | PSMN2R7-30PL | PSMN2R8-40PS | SWMN7N65J
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