OSG60R108FZF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG60R108FZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 37.1 nC
   trⓘ - Rise Time: 71.1 nS
   Cossⓘ - Output Capacitance: 246 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm
   Package: TO220F

OSG60R108FZF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

OSG60R108FZF Datasheet (PDF)

..1. Size:721K oriental semi
osg60r108fzf.pdf

OSG60R108FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

5.1. Size:937K oriental semi
osg60r108kzf.pdf