OSG60R108FZF Datasheet and Replacement
Type Designator: OSG60R108FZF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 71.1 nS
Cossⓘ - Output Capacitance: 246 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm
Package: TO220F
OSG60R108FZF substitution
OSG60R108FZF Datasheet (PDF)
osg60r108fzf.pdf
OSG60R108FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio
Datasheet: OSG60R099HF , OSG60R099HSZF , OSG60R099HT3F , OSG60R099JF , OSG60R099KEZF , OSG60R099KSZF , OSG60R099KT3F , OSG60R099PEZF , 8205A , OSG60R108HSZF , OSG60R108HT3ZF , OSG60R108HZF , OSG60R108JZF , OSG60R108KSZF , OSG60R108KZF , OSG60R108PZF , OSG60R140FSZF .
History: STL150N3LLH6 | IPI90R500C3 | OSG60R035HF | STL17N3LLH6 | STL15N3LLH5
Keywords - OSG60R108FZF MOSFET datasheet
OSG60R108FZF cross reference
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OSG60R108FZF substitution
OSG60R108FZF replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: STL150N3LLH6 | IPI90R500C3 | OSG60R035HF | STL17N3LLH6 | STL15N3LLH5
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