OSG60R108PZF MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG60R108PZF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 101 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 37.1 nC
trⓘ - Rise Time: 71.1 nS
Cossⓘ - Output Capacitance: 246 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm
Package: TO220
OSG60R108PZF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG60R108PZF Datasheet (PDF)
osg60r108fzf.pdf
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OSG60R108FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio
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