OSG60R200PSZF Datasheet. Specs and Replacement

Type Designator: OSG60R200PSZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 151 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68.2 nS

Cossⓘ - Output Capacitance: 98.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO220

OSG60R200PSZF substitution

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OSG60R200PSZF datasheet

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OSG60R200PSZF

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OSG60R200PSZF

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 7.1. Size:401K  oriental semi
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OSG60R200PSZF

OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara... See More ⇒

Detailed specifications: OSG60R1K2FF, OSG60R1K2PF, OSG60R1K8AF, OSG60R1K8DF, OSG60R1K8FF, OSG60R1K8PF, OSG60R200FSZF, OSG60R200JSZF, 4N60, OSG60R260AF, OSG60R260DF, OSG60R260FF, EMP21N03HC, OSG60R260IF, OSG60R260PF, OSG60R2K2AF, OSG60R2K2ASF

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