All MOSFET. OSG60R200PSZF Datasheet

 

OSG60R200PSZF Datasheet and Replacement


   Type Designator: OSG60R200PSZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 68.2 nS
   Cossⓘ - Output Capacitance: 98.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO220
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OSG60R200PSZF Datasheet (PDF)

 ..1. Size:948K  oriental semi
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OSG60R200PSZF

 5.1. Size:844K  oriental semi
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OSG60R200PSZF

 5.2. Size:813K  oriental semi
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OSG60R200PSZF

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OSG60R200PSZF

OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRFS540 | CED4060A | SSI3N80A | JCS7N60FB | APT4016BVR | FQB6N80TM | STP4N100

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