OSG60R360DZF Datasheet. Specs and Replacement

Type Designator: OSG60R360DZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40.2 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO252

OSG60R360DZF substitution

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OSG60R360DZF datasheet

 ..1. Size:879K  oriental semi
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OSG60R360DZF

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 4.1. Size:890K  oriental semi
 osg60r360dsf.pdf pdf_icon

OSG60R360DZF

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 5.1. Size:861K  oriental semi
 osg60r360fsf.pdf pdf_icon

OSG60R360DZF

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 7.1. Size:997K  oriental semi
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Detailed specifications: OSG60R2K2DSF, OSG60R2K2FSF, OSG60R2K8AF, OSG60R2K8DF, OSG60R320FT3ZF, OSG60R340DT3F, OSG60R340FT3F, OSG60R360DSF, 75N75, OSG60R360FSF, OSG60R380AF, OSG60R380DF, OSG60R380DTF, OSG60R380FF, OSG60R380IF, OSG60R380PF, OSG60R580AF

Keywords - OSG60R360DZF MOSFET specs

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