OSG60R670DF Datasheet. Specs and Replacement

Type Designator: OSG60R670DF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.1 nS

Cossⓘ - Output Capacitance: 46.9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.67 Ohm

Package: TO252

OSG60R670DF substitution

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OSG60R670DF datasheet

 ..1. Size:1069K  oriental semi
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OSG60R670DF

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 5.1. Size:1004K  oriental semi
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OSG60R670DF

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 5.2. Size:991K  oriental semi
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OSG60R670DF

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 5.3. Size:1018K  oriental semi
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Detailed specifications: OSG60R580AF, OSG60R580DF, OSG60R580DT3F, OSG60R580DTF, OSG60R580FF, OSG60R580PF, OSG60R600DMZF, OSG60R670AF, MMIS60R580P, OSG60R670FF, OSG60R670PF, OSG60R900AF, OSG60R900DF, OSG60R900FF, OSG60R900PF, OSG65R017HT3F, OSG65R020HT3F

Keywords - OSG60R670DF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs