OSG65R099FZF Datasheet. Specs and Replacement

Type Designator: OSG65R099FZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57.4 nS

Cossⓘ - Output Capacitance: 448.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm

Package: TO220F

OSG65R099FZF substitution

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OSG65R099FZF datasheet

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Detailed specifications: OSG65R074KT3ZF, OSG65R080HT3ZF, OSG65R080KT3ZF, OSG65R080PT3ZF, OSG65R080TT3ZF, OSG65R099FF, OSG65R099FSZF, OSG65R099FT3ZF, IRF4905, OSG65R099H4SZF, OSG65R099HF, OSG65R099HSF, OSG65R099HSZF, OSG65R099HT3ZF, OSG65R099HZF, OSG65R099KT3ZF, OSG65R099PT3ZF

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