OSG65R108HSZF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG65R108HSZF
   Marking Code: OSG65R108HSZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 261 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 63.9 nC
   trⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm
   Package: TO247

OSG65R108HSZF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

OSG65R108HSZF Datasheet (PDF)

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osg65r108hszf.pdf

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OSG65R1K4xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG65R1K4AF, OSG65R1K4DF, OSG65R1K4FF, OSG65R1K4PF , Enhancement Mode N-Channel Power MOSFET Genera

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