OSG65R108HSZF Datasheet. Specs and Replacement
Type Designator: OSG65R108HSZF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 261 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm
Package: TO247
OSG65R108HSZF substitution
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OSG65R108HSZF datasheet
Detailed specifications: OSG65R099HF, OSG65R099HSF, OSG65R099HSZF, OSG65R099HT3ZF, OSG65R099HZF, OSG65R099KT3ZF, OSG65R099PT3ZF, OSG65R099TT3ZF, AON7410, OSG65R120FT3F, OSG65R125FF, OSG65R125FSF, OSG65R125FZF, OSG65R125HF, OSG65R125HT3ZF, OSG65R125IF, OSG65R125JF
Keywords - OSG65R108HSZF MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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