OSG65R108HSZF MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG65R108HSZF
Marking Code: OSG65R108HSZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 261 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 63.9 nC
trⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 190 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm
Package: TO247
OSG65R108HSZF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG65R108HSZF Datasheet (PDF)
osg65r1k4af osg65r1k4df osg65r1k4ff osg65r1k4pf.pdf
OSG65R1K4xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG65R1K4AF, OSG65R1K4DF, OSG65R1K4FF, OSG65R1K4PF , Enhancement Mode N-Channel Power MOSFET Genera
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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