OSG65R260DSF Datasheet. Specs and Replacement

Type Designator: OSG65R260DSF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 123 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.3 nS

Cossⓘ - Output Capacitance: 100.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: TO252

OSG65R260DSF substitution

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OSG65R260DSF datasheet

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OSG65R260DSF

OSG65R260FSF_NB_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG65R260FSF_NB , Enhancement Mode N-Channel Power MOSFET General Description OSG65R260FSF_NB... See More ⇒

 5.2. Size:966K  oriental semi
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Detailed specifications: OSG65R200JT3F, OSG65R200KF, OSG65R200PF, OSG65R220FZF, OSG65R220HZF, OSG65R220IZF, OSG65R220KZF, OSG65R220PZF, STP65NF06, OSG65R260FSF, OSG65R260FSF-NB, OSG65R290AF, OSG65R290DF, OSG65R290FEF-NB, OSG65R290FF, OSG65R290FTF, OSG65R290KF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.