OSG65R290PF Datasheet. Specs and Replacement

Type Designator: OSG65R290PF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39.9 nS

Cossⓘ - Output Capacitance: 67.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO220

OSG65R290PF substitution

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OSG65R290PF datasheet

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 5.3. Size:1036K  oriental semi
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Detailed specifications: OSG65R260FSF, OSG65R260FSF-NB, OSG65R290AF, OSG65R290DF, OSG65R290FEF-NB, OSG65R290FF, OSG65R290FTF, OSG65R290KF, AON7403, OSG65R2K4AF, OSG65R2K4DF, OSG65R2K4FF, OSG65R2K4PF, OSG65R2KAF, OSG65R2KDF, OSG65R2KFF, OSG65R2KFSF

Keywords - OSG65R290PF MOSFET specs

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