OSG65R360DEF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG65R360DEF
   Marking Code: OSG65R360DE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18.7 nC
   trⓘ - Rise Time: 24.8 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO252

OSG65R360DEF Transistor Equivalent Substitute - MOSFET Cross-Reference Search