OSG65R900GTF Datasheet. Specs and Replacement

Type Designator: OSG65R900GTF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.5 nS

Cossⓘ - Output Capacitance: 30.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: PDFN5X6

OSG65R900GTF substitution

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OSG65R900GTF datasheet

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Detailed specifications: OSG65R760PF, OSG65R900AF, OSG65R900ATF, OSG65R900DEF, OSG65R900DF, OSG65R900FEF, OSG65R900FF, OSG65R900FTF, RFP50N06, OSG65R900PF, OSG70R1K4AF, OSG70R1K4DF, OSG70R1K4FF, OSG70R1K4PF, OSG70R1KAF, OSG70R1KDF, OSG70R1KFF

Keywords - OSG65R900GTF MOSFET specs

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