OSG70R1K4DF Datasheet. Specs and Replacement

Type Designator: OSG70R1K4DF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.4 nS

Cossⓘ - Output Capacitance: 18.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO252

OSG70R1K4DF substitution

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OSG70R1K4DF datasheet

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Detailed specifications: OSG65R900DEF, OSG65R900DF, OSG65R900FEF, OSG65R900FF, OSG65R900FTF, OSG65R900GTF, OSG65R900PF, OSG70R1K4AF, 18N50, OSG70R1K4FF, OSG70R1K4PF, OSG70R1KAF, OSG70R1KDF, OSG70R1KFF, OSG70R1KPF, OSG70R280KF, OSG70R290DF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.