OSS65R125PZF Datasheet. Specs and Replacement

Type Designator: OSS65R125PZF  📄📄 

Marking Code: OSS65R125PZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 219 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V

Qg ⓘ - Total Gate Charge: 24 nC

tr ⓘ - Rise Time: 48.2 nS

Cossⓘ - Output Capacitance: 163 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO220

OSS65R125PZF substitution

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OSS65R125PZF datasheet

 ..1. Size:923K  oriental semi
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 8.3. Size:905K  oriental semi
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Detailed specifications: OSS60R099HF, OSS60R099JF, OSS60R099KF, OSS60R099PF, OSS60R099TF, OSS60R190FF, OSS60R190JF, OSS60R190PF, BS170, OSS65R240JF, OSS65R340DF, OSS65R340FF, OSS65R340JF, OSS70R350DF, SFG08R06GF, SFG08R08DF, SFG08R08GF

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