OSS65R125PZF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSS65R125PZF
   Marking Code: OSS65R125PZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 219 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   Rise Time (tr): 48.2 nS
   Drain-Source Capacitance (Cd): 163 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm
   Package: TO220

OSS65R125PZF Transistor Equivalent Substitute - MOSFET Cross-Reference Search