SFG08R08DF Datasheet. Specs and Replacement

Type Designator: SFG08R08DF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 148 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21.5 nS

Cossⓘ - Output Capacitance: 1304.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: PDFN5X6

SFG08R08DF substitution

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Detailed specifications: OSS60R190PF, OSS65R125PZF, OSS65R240JF, OSS65R340DF, OSS65R340FF, OSS65R340JF, OSS70R350DF, SFG08R06GF, RFP50N06, SFG08R08GF, SFG08R08PF, SFG08R16BF, SFG08R16DF, SFG08S06DF, SFG08S06GF, SFG08S10BF, SFG08S10DF

Keywords - SFG08R08DF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs