SFG10R05IF Datasheet. Specs and Replacement

Type Designator: SFG10R05IF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 923.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO262

SFG10R05IF substitution

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SFG10R05IF datasheet

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 6.3. Size:861K  oriental semi
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Detailed specifications: SFG08S10DF, SFG100N08GF, SFG100N08KF, SFG100N10DF, SFG100N10GF, SFG100N10KF, SFG100N10PF, SFG10R05FF, IRF1405, SFG10R05KF, SFG10R05PF, SFG10R08BF, SFG10R08GF, SFG10R08PF, SFG10R10AF, SFG10R10BF, SFG10R10DF

Keywords - SFG10R05IF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs