SFG10R10AF Datasheet. Specs and Replacement

Type Designator: SFG10R10AF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 361 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO251

SFG10R10AF substitution

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SFG10R10AF datasheet

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SFG10R10AF

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 6.2. Size:1021K  oriental semi
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 6.3. Size:1059K  oriental semi
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Detailed specifications: SFG100N10PF, SFG10R05FF, SFG10R05IF, SFG10R05KF, SFG10R05PF, SFG10R08BF, SFG10R08GF, SFG10R08PF, IRF9640, SFG10R10BF, SFG10R10DF, SFG10R10FF, SFG10R10GF, SFG10R10IF, SFG10R10PF, SFG10R12AF, SFG10R12BF

Keywords - SFG10R10AF MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.