SFG10S08PF MOSFET. Datasheet pdf. Equivalent
Type Designator: SFG10S08PF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 361 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
SFG10S08PF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFG10S08PF Datasheet (PDF)
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