SFG10S10DF Specs and Replacement
Type Designator: SFG10S10DF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 322 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO252
SFG10S10DF substitution
SFG10S10DF datasheet
Detailed specifications: SFG10R20GF , SFG10R20PF , SFG10R50DF , SFG10R75BCF , SFG10R75DF , SFG10S08DF , SFG10S08GF , SFG10S08PF , IRFB4110 , SFG10S10GF , SFG10S12BF , SFG10S12DF , SFG10S20DF , SFG10S20GF , SFG10S25DF , SFG110N12FF , SFG110N12IF .
Keywords - SFG10S10DF MOSFET specs
SFG10S10DF cross reference
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SFG10S10DF substitution
SFG10S10DF replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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