SFG110N12PF MOSFET. Datasheet pdf. Equivalent

   Type Designator: SFG110N12PF
   Marking Code: SFG110N12P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 192 W
   Maximum Drain-Source Voltage |Vds|: 120 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 110 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 68.9 nC
   Rise Time (tr): 33 nS
   Drain-Source Capacitance (Cd): 779 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm
   Package: TO220

SFG110N12PF Transistor Equivalent Substitute - MOSFET Cross-Reference Search