AP30H50Q Specs and Replacement
Type Designator: AP30H50Q
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 187 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: PDFN3X3-8L
AP30H50Q substitution
- MOSFET ⓘ Cross-Reference Search
AP30H50Q datasheet
Detailed specifications: SFS12R08GNF, SFS12R08PNF, SFS130N06GF, SFS15R065KNF, SFS15R065PNF, AP0803QD, AP2045Q, AP20P30Q, RU7088R, AP30H80G, AP30H80Q, AP3908GD, AP3908QD, AP3910GD, AP4008QD, AP4085G, AP4822QD
Keywords - AP30H50Q MOSFET specs
AP30H50Q cross reference
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AP30H50Q replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: B1M160120HC | AP2309GN | AP9950AGH
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