AP30H80G PDF and Equivalents Search

 

AP30H80G Specs and Replacement

Type Designator: AP30H80G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.5 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: PDFN5X6-8L

AP30H80G substitution

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Detailed specifications: SFS12R08PNF, SFS130N06GF, SFS15R065KNF, SFS15R065PNF, AP0803QD, AP2045Q, AP20P30Q, AP30H50Q, MMIS60R580P, AP30H80Q, AP3908GD, AP3908QD, AP3910GD, AP4008QD, AP4085G, AP4822QD, AP4910GD

Keywords - AP30H80G MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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