AP4822QD Datasheet and Replacement
Type Designator: AP4822QD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: PMPAK3X3
AP4822QD substitution
AP4822QD Datasheet (PDF)
ap4820agyt-hf.pdf
AP4820AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 15AGDSDDDescriptionDAP4820A series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-
ap4820gyt-hf.pdf
AP4820GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15AGDSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design,
ap4820agyt.pdf
AP4820AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 15AGDSDDDescriptionDAP4820A series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-
Datasheet: AP30H50Q , AP30H80G , AP30H80Q , AP3908GD , AP3908QD , AP3910GD , AP4008QD , AP4085G , IRFZ44N , AP4910GD , AP60P20Q , AP68N06G , AP80N04G , AP80N04Q , AP90N03Q , AP90P03G , AP90P03Q .
History: AON1620 | QM2401K | IRFU010 | SVGP157R5NT | P2003EVT | IXFH42N50P2 | IPA60R280CFD7
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History: AON1620 | QM2401K | IRFU010 | SVGP157R5NT | P2003EVT | IXFH42N50P2 | IPA60R280CFD7
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