AP4822QD Specs and Replacement
Type Designator: AP4822QD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: PMPAK3X3
AP4822QD substitution
- MOSFET ⓘ Cross-Reference Search
AP4822QD datasheet
ap4820agyt-hf.pdf
AP4820AGYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 15A G D S D D Description D AP4820A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-... See More ⇒
ap4820gyt-hf.pdf
AP4820GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15A G D S D D Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,... See More ⇒
Detailed specifications: AP30H50Q, AP30H80G, AP30H80Q, AP3908GD, AP3908QD, AP3910GD, AP4008QD, AP4085G, IRFZ44N, AP4910GD, AP60P20Q, AP68N06G, AP80N04G, AP80N04Q, AP90N03Q, AP90P03G, AP90P03Q
Keywords - AP4822QD MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: TPCS8210
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